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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-247 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING (see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJW16010 Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER ANG H INC Collector-base voltage E SEM Open base OND IC CONDITIONS TOR UC VALUE 850 450 6 15 20 10 15 UNIT V V V A A A A W W/ae ae ae Open emitter Collector-emitter voltage Emitter-base voltage Open collector Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Derate above 25ae Junction temperature Storage temperature TC=25ae 135 1.11 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.93 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance CONDITIONS IC=0.1A ;IB=0 IC=5A; IB=0.7A IC=10A ;IB=1.3A TC=100ae IC=10A ;IB=1.3A TC=100ae VCE=850V;RBE=50| ;TC=100ae MIN 450 MJW16010 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICER ICEV IEBO hFE COB TYP. MAX UNIT V 2.5 3.0 3.0 1.5 1.5 2.5 0.25 1.5 1.0 5 V V V mA mA mA VCE=850V; VBE(off)=1.5V TC=100ae VEB=6V; IC=0 IC=15A ; VCE=5V VCB=10V,IE=0;f=1.0KHz Switching times resistive load td tr ts tf Delay time Rise time CHA IN Storage time Fall time E SEM NG OND IC TOR UC 400 20 200 1200 200 pF ns ns ns ns IC=10A ; VCC=250V IB1=1.3A ;IB2=2.6A PW=30|I s; RB2=1.6| Duty CycleU 2.0% 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJW16010 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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